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技术参数

电源
Current - Collector (Ic) (Max)65mA
Power - Max200mW
Voltage - Collector Emitter Breakdown (Max)10V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 8V
Frequency - Transition9GHz
Gain15dB
Noise Figure (dB Typ @ f)1.2dB @ 1GHz
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR)
Package / CaseTO-253-4, TO-253AA
Supplier Device PackageSOT-143
其他
MfrRenesas
Product StatusLast Time Buy
Series-
Transistor TypeNPN

器件图片

技术资料