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| 电源 | |
|---|---|
| Power - Max | 350mW |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Gain | - |
| Noise Figure (dB Typ @ f) | - |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C~150°C(TJ) |
| Package | Bag |
| 其他 | |
| Mfr | NTE Electronics, Inc |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
技术资料
该型号暂未收录资料。