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| 电源 | |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 400 mW |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 µA |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| 其他 | |
| Base Product Number | J112 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V (VGS) |
| Mfr | NXP USA Inc. |
| Product Status | Obsolete |
| Resistance - RDS(On) | 50 Ohms |
| Series | - |
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