IXYS美国

IXBH32N300HV

在产晶体管 - IGBT - 单

DISC IGBT BIMSFT-VERYHIVOLT TO-2

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技术参数

电源
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)280 A
Power - Max400 W
Voltage - Collector Emitter Breakdown (Max)3000 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseTO-247-3 Variant
Supplier Device PackageTO-247HV
其他
Base Product NumberIXBH32
Gate Charge142 nC
IGBT Type-
Input TypeStandard
MfrIXYS
Product StatusActive
SeriesBIMOSFET™
Switching Energy-
Td (on/off) @ 25°C-
Test Condition-
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 32A

技术资料

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