RLDRAM3 Memory, 1.15Gbit, x18, C
类型DRAM
容量1.152 Gbit
接口并口
供电电压1.28 ~ 1.42 V
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类型DRAM
容量1.152 Gbit
接口并口
供电电压1.28 ~ 1.42 V
时钟频率1.066 GHz最大
| 电源 | |
|---|---|
| Voltage - Supply | 1.28V ~ 1.42V |
| 交流 / 直流特性 | |
| Clock Frequency | 1.066 GHz |
| 环境与封装 | |
| Memory Size | 1.152Gbit |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Package | Bulk |
| Package / Case | 168-LBGA |
| Supplier Device Package | 168-FBGA (13.5x13.5) |
| 其他 | |
| Access Time | 8 ns |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 64M x 18 |
| Memory Type | Volatile |
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Product Status | Active |
| Series | - |
| Technology | RLDRAM 3 |
| Write Cycle Time - Word, Page | - |
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