MOSFET N-CH 30V 1.2A SOT-23
沟道N 沟道
耐压30 V
连续漏极电流1.2 A
导通电阻250 mΩ
全部替代型号
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技术参数
沟道N 沟道
耐压30 V
连续漏极电流1.2 A
导通电阻250 mΩ最大 · 910mA
阈值电压1 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | Micro3™/SOT-23 |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 910mA, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |