UMW马来西亚

MOSFET N-CH 20V 1.2A SOT-23

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技术参数

电源
Continuous Drain Current, $V_{GS}$ @ 4.5V1.2 A
Drain-Source Breakdown Voltage20 V (Min)
Gate Threshold Voltage0.7 V (Min)
Power Dissipation540 mW
环境与封装
Junction and Storage Temperature Range-55 to 150 °C
PackageSOT-23
其他
Static Drain-to-Source On-Resistance145 mΩ (Max)
Total Gate Charge2.6 nC (Typ)

技术资料