沟道N 沟道
耐压100 V
连续漏极电流1 A
导通电阻540 mΩ
全部替代型号
查看完整报告已收录 1 个替代型号，登录后查看。
技术参数
沟道N 沟道
耐压100 V
连续漏极电流1 A
导通电阻540 mΩ最大 · 600mA
阈值电压2 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Power Dissipation (Max) | 1.3W (Ta) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package | 4-HVMDIP |
| 其他 | |
| Base Product Number | IRLD110 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
器件图片
技术资料
该型号暂未收录资料。