IRL540NSTRR

停产单 FET,MOSFETD2PAK

MOSFET N-CH 100V 36A D2PAK

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沟道N 沟道
耐压100 V
连续漏极电流36 A
导通电阻44 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流36 A
导通电阻44 mΩ最大 · 18A
阈值电压2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V
MfrInfineon Technologies
Product StatusObsolete
Rds On (Max) @ Id, Vgs44mOhm @ 18A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2V @ 250µA

技术资料