IRG4PF50WPBF

在产晶体管 - IGBT - 单

IGBT, 51A I(C), 900V V(BR)CES, N

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技术参数

电源
Current - Collector (Ic) (Max)51 A
Current - Collector Pulsed (Icm)204 A
Power - Max200 W
Voltage - Collector Emitter Breakdown (Max)900 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-247-3
Supplier Device PackageTO-247AC
其他
Gate Charge160 nC
IGBT Type-
Input TypeStandard
MfrInternational Rectifier
Product StatusActive
Series-
Switching Energy190µJ (on), 1.06mJ (off)
Td (on/off) @ 25°C29ns/110ns
Test Condition720V, 28A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 28A

技术资料