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技术参数

电源
Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max2W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
其他
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 15V
MfrInternational Rectifier
Product StatusObsolete
Rds On (Max) @ Id, Vgs15.5mOhm @ 9.7A, 10V
SeriesHEXFET®
Vgs(th) (Max) @ Id2.35V @ 25µA

技术资料