MOSFET N-CH 500V 2.5A I2PAK
沟道N 沟道
耐压500 V
连续漏极电流2.5 A
导通电阻3 Ω
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技术参数
沟道N 沟道
耐压500 V
连续漏极电流2.5 A
导通电阻3 Ω最大 · 1.5A
阈值电压4.5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 50W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Supplier Device Package | I2PAK |
| 其他 | |
| Base Product Number | IRF820 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Packaging | Tube |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |