IRF7341TRPBF

IRF7341TRPBF

在产FET,MOSFET 阵列

MOSFET 2N-CH 55V 4.7A 8SO

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C4.7A
Drain to Source Voltage (Vdss)55V
Power - Max2W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
其他
Base Product NumberIRF734
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs50mOhm @ 4.7A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

器件图片

技术资料