IRF7341GTRPBF

IRF7341GTRPBF

在产FET,MOSFET 阵列

MOSFET 2N-CH 55V 5.1A 8SO

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C5.1A
Drain to Source Voltage (Vdss)55V
Power - Max2.4W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
其他
Base Product NumberIRF734
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 25V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs50mOhm @ 5.1A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA (Min)

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技术资料

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