DIODE SIL CARB 650V 5A TO263-2
反向耐压650 V
平均整流电流5 A
正向压降1.8 V
类型肖特基
全部替代型号
查看完整报告技术参数
反向耐压650 V
平均整流电流5 A
正向压降1.8 V最大 · 5 A
类型肖特基
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 5A |
| Current - Reverse Leakage @ Vr | 830 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-2 |
| 其他 | |
| Base Product Number | IDK05G65 |
| Capacitance @ Vr, F | 160pF @ 1V, 1MHz |
| Mfr | Infineon Technologies |
| Product Status | Last Time Buy |
| Reverse Recovery Time (trr) | 0 ns |
| Series | CoolSiC™+ |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |