DIODE SIL CARB 650V 4A TO263-2
反向耐压650 V
平均整流电流4 A
正向压降1.8 V
类型肖特基
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反向耐压650 V
平均整流电流4 A
正向压降1.8 V最大 · 4 A
类型肖特基
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 4A |
| Current - Reverse Leakage @ Vr | 670 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 4 A |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-2 |
| 其他 | |
| Base Product Number | IDK04G65 |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | CoolSiC™+ |
| Speed | No Recovery Time > 500mA (Io) |