HUF75329P3

停产晶体管 - FET,MOSFET - 单TO-220-3

MOSFET N-CH 55V 42A TO220-3

沟道N 沟道
耐压55 V
连续漏极电流42 A
导通电阻25 mΩ

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技术参数

沟道N 沟道
耐压55 V
连续漏极电流42 A
导通电阻25 mΩ最大 · 42A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drain to Source Voltage (Vdss)55 V
Power Dissipation (Max)94W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 25 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs25mOhm @ 42A, 10V
SeriesUltraFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料