GT-1000V-TRANSISTORS

在产单个双极晶体管

These power bipolar transistors are ideal for power-supply and lighting applications. They are available with a breakdown voltage up to 2000 V and are based on ST’s proprietary planar diffused collector technology offering the best cost/performance tradeoff.

问 AI FAE

全部替代型号

查看完整报告

技术参数

该型号暂未提供技术参数。

技术资料

该型号暂未收录资料。