G900P15D5

G900P15D5

在产单 FET,MOSFET8-DFN

P-150V,-60A,RD(MAX)<80M@-10V,VTH

沟道P 沟道
耐压150 V
连续漏极电流60 A
导通电阻80 mΩ

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技术参数

沟道P 沟道
耐压150 V
连续漏极电流60 A
导通电阻80 mΩ最大 · 5A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)100W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-DFN (4.9x5.75)
其他
FET FeatureStandard
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4050 pF @ 75 V
MfrGoford Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs80mOhm @ 5A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料