MOSFET P-CH 20V 3.5A 8SOIC
沟道P 沟道
耐压20 V
连续漏极电流3.5 A
导通电阻130 mΩ
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沟道P 沟道
耐压20 V
连续漏极电流3.5 A
导通电阻130 mΩ最大 · 3.5A
阈值电压1 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | 1W (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| 其他 | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 10 V |
| Mfr | Fairchild Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3.5A, 4.5V |
| Series | Automotive, AEC-Q101 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |