onsemi美国

FAM65CR51DZ2

在产晶体管 - IGBT - 模块

IGBT MOD 650V 33A 160W APMCD-B16

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技术参数

电源
Current - Collector (Ic) (Max)33 A
Power - Max160 W
Voltage - Collector Emitter Breakdown (Max)650 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / Case12-SSIP Exposed Pad, Formed Leads
Supplier Device PackageAPMCD-B16
其他
Base Product NumberFAM65
Configuration2 Independent
IGBT Type-
InputStandard
Input Capacitance (Cies) @ Vce4.86 nF @ 400 V
Mfronsemi
NTC ThermistorNo
Product StatusActive
Series-
Vce(on) (Max) @ Vge, Ic-

技术资料

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