ES3JB
Surge美国

DIODE GEN PURP 600V 3A DO214AA

反向耐压600 V
平均整流电流3 A
正向压降1.7 V
类型标准

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技术参数

反向耐压600 V
平均整流电流3 A
正向压降1.7 V最大 · 3 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 3 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C~150°C
PackageBag
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)
其他
Capacitance @ Vr, F45pF @ 4V, 1MHz
Diode TypeStandard
MfrSURGE
Product StatusActive
Reverse Recovery Time (trr)35 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

器件图片

技术资料