DIODE GEN PURP 200V 2A DO214AA

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反向耐压200 V
平均整流电流2 A
正向压降950 mV
类型标准

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技术参数

反向耐压200 V
平均整流电流2 A
正向压降950 mV最大 · 2 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)2A
Current - Reverse Leakage @ Vr10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 2 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C~150°C
PackageTape & Reel (TR)
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)
其他
Base Product NumberES2D
Capacitance @ Vr, F25pF @ 4V, 1MHz
Diode TypeStandard
MfrTaiwan Semiconductor Corporation
Product StatusActive
Reverse Recovery Time (trr)35 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

技术资料

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