ES2D
onsemi美国

ES2D

不推荐用于新设计单二极管

DIODE GEN PURP 200V 2A DO214AA

反向耐压200 V
平均整流电流2 A
正向压降900 mV
类型标准

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技术参数

反向耐压200 V
平均整流电流2 A
正向压降900 mV最大 · 2 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)2A
Current - Reverse Leakage @ Vr10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If900 mV @ 2 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-50°C ~ 150°C
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)
其他
Base Product NumberES2
Capacitance @ Vr, F18pF @ 4V, 1MHz
Mfronsemi
Product StatusNot For New Designs
Reverse Recovery Time (trr)20 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

器件图片

技术资料