EMB10FHAT2R

不推荐用于新设计晶体管 - 双极(BJT) - 阵列,预偏置

PNP+PNP DIGITAL TRANSISTOR (CORR

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技术参数

电源
Current - Collector Cutoff (Max)500nA
Current - Collector (Ic) (Max)100mA
Power - Max150mW
Voltage - Collector Emitter Breakdown (Max)50V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition250MHz
环境与封装
Mounting TypeSurface Mount
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6
其他
Base Product NumberEMB10
MfrRohm Semiconductor
Product StatusNot For New Designs
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
SeriesAutomotive, AEC-Q101
Transistor Type2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA

技术资料

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