CTLDM8120-M832DS TR

停产晶体管 - FET,MOSFET - 阵列

MOSFET DUAL N-CHANNEL

问 AI FAE

全部替代型号

查看完整报告

技术参数

电源
Current - Continuous Drain (Id) @ 25°C860mA (Ta)
Drain to Source Voltage (Vdss)20V
Power - Max1.65W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-65°C~150°C(TJ)
PackageTape & Reel (TR)
Package / Case8-TDFN Exposed Pad
Supplier Device PackageTLM832DS
其他
FET FeatureStandard
FET Type2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs3.56nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 16V
MfrCentral Semiconductor Corp
Product StatusObsolete
Rds On (Max) @ Id, Vgs150mOhm @ 950mA, 4.5V
Series-
Vgs(th) (Max) @ Id1V @ 250µA

技术资料

该型号暂未收录资料。