CTLDM303N-M832DS BK

停产FET,MOSFET 阵列

MOSFET 2N-CH 30V 3.6A TLM832DS

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max1.65W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-TDFN Exposed Pad
Supplier Device PackageTLM832DS
其他
Base Product NumberCTLDM303N
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 10V
MfrCentral Semiconductor Corp
Product StatusObsolete
Rds On (Max) @ Id, Vgs40mOhm @ 1.8A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.25V @ 250µA

技术资料

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