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已收录 8 个替代型号,其中国产替代 1 个,登录后查看。

技术参数

电源
Current - Continuous Drain (Id) @ 25°C50A
Drain to Source Voltage (Vdss)25V
Power - Max13W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerLDFN
Supplier Device Package8-LSON (5x6)
其他
Base Product NumberCSD86360Q5
FET FeatureLogic Level Gate
FET Type2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2060pF @ 12.5
MfrTexas Instruments
Product StatusActive
Rds On (Max) @ Id, Vgs-
SeriesNexFET™
Vgs(th) (Max) @ Id2.1V @ 250µA

器件图片

技术资料