CSD86360Q5D

MOSFET 2N-CH 25V 50A 8LSON

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C50A
Drain to Source Voltage (Vdss)25V
Power - Max13W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-PowerLDFN
Supplier Device Package8-LSON (5x6)
其他
Base Product NumberCSD86360Q5
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2060pF @ 12.5
ManufacturerTexas Instruments
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
Rds On (Max) @ Id, Vgs-
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA

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技术资料

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