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技术参数

电源
Current - Continuous Drain (Id) @ 25°C39A
Drain to Source Voltage (Vdss)20V
Power - Max2.5W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device Package8-VSON (3.3x3.3)
其他
Base Product NumberCSD85312
FET FeatureLogic Level Gate, 5V Drive
FET Type2 N-Channel (Dual) Common Source
Gate Charge (Qg) (Max) @ Vgs15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2390pF @ 10V
MfrTexas Instruments
Product StatusActive
Rds On (Max) @ Id, Vgs12.4mOhm @ 10A, 8V
SeriesNexFET™
Vgs(th) (Max) @ Id1.4V @ 250µA

器件图片

技术资料