CSD85301Q2T

MOSFET 2N-CH 20V 5A 6WSON

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C5A
Drain to Source Voltage (Vdss)20V
Power - Max2.3W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WSON (2x2)
其他
Base Product NumberCSD85301
FET FeatureLogic Level Gate, 5V Drive
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds469pF @ 10V
MfrTexas Instruments
Product StatusActive
Rds On (Max) @ Id, Vgs27mOhm @ 5A, 4.5V
SeriesNexFET™
Vgs(th) (Max) @ Id1.2V @ 250µA

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技术资料

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