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技术参数

电源
Current - Continuous Drain (Id) @ 25°C3.9A
Drain to Source Voltage (Vdss)-
Power - Max700mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case9-UFBGA, DSBGA
Supplier Device Package9-DSBGA
其他
Base Product NumberCSD75207
FET FeatureLogic Level Gate
FET Type2 P-Channel (Dual) Common Source
Gate Charge (Qg) (Max) @ Vgs3.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds595pF @ 10V
MfrTexas Instruments
Product StatusActive
Rds On (Max) @ Id, Vgs162mOhm @ 1A, 1.8V
SeriesNexFET™
Vgs(th) (Max) @ Id1.1V @ 250µA

器件图片

技术资料