DIODE GEN PURP 200V 6A 106
反向耐压200 V
平均整流电流6 A
正向压降1.3 V
类型标准
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反向耐压200 V
平均整流电流6 A
正向压降1.3 V最大 · 6 A
类型标准Fast Recovery =< 500ns，> 200mA (Io)
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 6A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 6 A |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C~175°C |
| Package | Bulk |
| Package / Case | 106, Axial |
| Supplier Device Package | 106 |
| 其他 | |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Reverse Recovery Time (trr) | 200 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |