MOSFET N-CH 20V 100MA SOT523
沟道N 沟道
耐压20 V
连续漏极电流100 mA
导通电阻3 Ω
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技术参数
沟道N 沟道
耐压20 V
连续漏极电流100 mA
导通电阻3 Ω最大 · 10mA
阈值电压900 mV最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Power Dissipation (Max) | 250mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SC-89, SOT-490 |
| Supplier Device Package | SOT-523 |
| 其他 | |
| Base Product Number | CMUDM7001 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.57 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9 pF @ 3 V |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
技术资料
该型号暂未收录资料。