CMS35N04V8-HF
Comchip Technology中国台湾

MOSFET N-CH 40V 35A 8PDFN

沟道N 沟道
耐压40 V
连续漏极电流35 A
导通电阻9 mΩ

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技术参数

沟道N 沟道
耐压40 V
连续漏极电流35 A
导通电阻9 mΩ最大 · 10A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2W (Ta), 44W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-PDFN (SPR-PAK ) (3.3x3.3)
其他
Base Product NumberCMS35
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 25 V
MfrComchip Technology
Product StatusObsolete
Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

器件图片

技术资料