MOSFET N-CH 60V 4.4A/16A DPAK
沟道N 沟道
耐压60 V
连续漏极电流4.4 ~ 16 A
导通电阻50 mΩ
全部替代型号
查看完整报告已收录 4 个替代型号，其中国产替代 1 个，登录后查看。
技术参数
沟道N 沟道
耐压60 V
连续漏极电流4.4 ~ 16 A
导通电阻50 mΩ最大 · 8A
阈值电压2.5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 16A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2W (Ta), 27W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-PAK (TO-252) |
| 其他 | |
| Base Product Number | CMS16 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 815 pF @ 15 V |
| Mfr | Comchip Technology |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 8A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |