Comchip Technology中国台湾

CMS13N06H8-HF

在产晶体管 - FET,MOSFET - 单8-DFN

DIODE

沟道N 沟道
耐压60 V
连续漏极电流56 A
导通电阻6.4 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流56 A
导通电阻6.4 mΩ最大 · 25A
阈值电压2.6 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta), 83W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / Case8-PowerVDFN
Supplier Device Package8-DFN (5x6)
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1619 pF @ 25 V
MfrComchip Technology
Product StatusActive
Rds On (Max) @ Id, Vgs6.4mOhm @ 25A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.6V @ 250µA

技术资料