MOSFET P-CH 100V 1.2A SOT23
沟道P 沟道
耐压100 V
连续漏极电流1.2 A
导通电阻650 mΩ
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技术参数
沟道P 沟道
耐压100 V
连续漏极电流1.2 A
导通电阻650 mΩ最大 · 1A
阈值电压2.5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| 其他 | |
| Base Product Number | CMS01 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 513 pF @ 15 V |
| Mfr | Comchip Technology |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
器件图片
技术资料
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