MOSFET N-CH 60V 1A SOT23
沟道N 沟道
耐压60 V
连续漏极电流1 A
导通电阻220 mΩ
全部替代型号
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技术参数
沟道N 沟道
耐压60 V
连续漏极电流1 A
导通电阻220 mΩ最大 · 500mA
阈值电压2.3 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Power Dissipation (Max) | 350mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| 其他 | |
| Base Product Number | CMPDM7002 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 500mA, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |