SOT-23, 30V, 0.1A, NPN BIPOLAR T
类型NPN
集射极耐压30 V
集电极电流100 mA
放大倍数 hFE110
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类型NPN
集射极耐压30 V
集电极电流100 mA最大
放大倍数 hFE1102mA
功率200 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 200 mW |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| 其他 | |
| Base Product Number | BC848 |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 100mA |
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