全部替代型号
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技术参数
类型PNP
集射极耐压60 V
集电极电流1 A最大
放大倍数 hFE40150mA
功率1 W最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| 其他 | |
| Base Product Number | BC638 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |