IC DRAM 512MBIT PARALLEL 60FBGA
类型DRAM
容量512 Mbit
接口并口
供电电压1.7 ~ 1.9 V
全部替代型号
查看完整报告已收录 7 个替代型号，登录后查看。
技术参数
类型DRAM
容量512 Mbit
接口并口
供电电压1.7 ~ 1.9 V
时钟频率200 MHz最大
| 电源 | |
|---|---|
| Voltage - Supply | 1.7V ~ 1.9V |
| 交流 / 直流特性 | |
| Clock Frequency | 200 MHz |
| 环境与封装 | |
| Memory Size | 512Mbit |
| Mounting Type | Surface Mount |
| Operating Temperature | -30°C ~ 85°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x9) |
| 其他 | |
| Access Time | 700 ps |
| Base Product Number | AS4C2M32 |
| DigiKey Programmable | Not Verified |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 32M x 16 |
| Memory Type | Volatile |
| Mfr | Alliance Memory, Inc. |
| Product Status | Obsolete |
| Series | - |
| Technology | SDRAM - Mobile LPDDR |
| Write Cycle Time - Word, Page | 15ns |