类型DRAM
容量2 Gbit
接口并口
供电电压1.283 ~ 1.45 V
全部替代型号
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技术参数
类型DRAM
容量2 Gbit
接口并口
供电电压1.283 ~ 1.45 V
时钟频率800 MHz最大
| 电源 | |
|---|---|
| Voltage - Supply | 1.283V ~ 1.45V |
| 交流 / 直流特性 | |
| Clock Frequency | 800 MHz |
| 环境与封装 | |
| Memory Size | 2Gbit |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C~105°C(TC) |
| Package | Tray |
| Package / Case | 78-VFBGA |
| Supplier Device Package | 78-FBGA (8x10.5) |
| 其他 | |
| Access Time | 20 ns |
| Base Product Number | AS4C256 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 256M x 8 |
| Memory Type | Volatile |
| Mfr | Alliance Memory, Inc. |
| Product Status | Obsolete |
| Series | Automotive, AEC-Q100 |
| Technology | SDRAM - DDR3L |
| Write Cycle Time - Word, Page | 15ns |