3LN01C-TB-H
onsemi美国

3LN01C-TB-H

停产晶体管 - FET,MOSFET - 单TO-236-3

MOSFET N-CH 30V 150MA 3CP

沟道N 沟道
耐压30 V
连续漏极电流150 mA
导通电阻3.7 Ω

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流150 mA
导通电阻3.7 Ω最大 · 80mA
电源
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Power Dissipation (Max)250mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59-3/CP3
其他
Base Product Number3LN01
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7 pF @ 10 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.7Ohm @ 80mA, 4V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id-

器件图片

技术资料