2SK209-GR(TE85L,F)

2SK209-GR(TE85L,F)

在产晶体管 - FET,MOSFET - 单TO-236-3

TRANS SJT N-CH 10MA SC59

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沟道N 沟道
连续漏极电流10 mA

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技术参数

沟道N 沟道
连续漏极电流10 mA
电源
Current - Continuous Drain (Id) @ 25°C10mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Power Dissipation (Max)150mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~125°C(TA)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59
其他
Base Product Number2SK209
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds13 pF @ 10 V
MfrToshiba Semiconductor and Storage
Product StatusActive
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-
Vgs(th) (Max) @ Id-

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技术资料