类型PNP
集射极耐压30 V
集电极电流500 mA
放大倍数 hFE200
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类型PNP
集射极耐压30 V
集电极电流500 mA最大
放大倍数 hFE200100mA
功率150 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 500 mA |
| Power - Max | 150 mW |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 125°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
| 其他 | |
| Base Product Number | 2SA1182 |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
器件图片
技术资料
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