2N7002ET1G
onsemi美国

2N7002ET1G

在产晶体管 - FET,MOSFET - 单SOT-23-3

MOSFET N-CH 60V 260MA SOT23-3

沟道N 沟道
耐压60 V
连续漏极电流260 mA
导通电阻2.5 Ω

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流260 mA
导通电阻2.5 Ω最大 · 240mA
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C260mA (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)300mW (Tj)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
其他
Base Product Number2N7002
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.81 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds26.7 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs2.5Ohm @ 240mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

器件图片

技术资料