类型NPN
集射极耐压100 V
集电极电流100 µA
放大倍数 hFE60
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类型NPN
集射极耐压100 V
集电极电流100 µA最大
放大倍数 hFE602A
功率1 W最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100µA |
| Current - Collector (Ic) (Max) | 100 µA |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package / Case | TO-276AA |
| Supplier Device Package | U-3 (TO-276AA) |
| 其他 | |
| Mfr | Microchip Technology |
| Packaging | Bulk |
| Part Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
技术资料
该型号暂未收录资料。