全部替代型号

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技术参数

电源
Current - Collector (Ic) (Max)1A
Power - Max20.5W
Voltage - Collector Emitter Breakdown (Max)42V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 500mA, 5V
Frequency - Transition2.3GHz
Gain8dB
Noise Figure (dB Typ @ f)-
环境与封装
Mounting TypeChassis Mount
Operating Temperature200°C(TJ)
PackageBulk
Package / Case55BT
Supplier Device Package55BT
其他
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor TypeNPN

技术资料