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G5S12010D 国产替代 型号

原型号
Global Power Technology-GPTG5S12010D
Capacitance @ Vr, F825pF @ 0V, 1MHzCurrent - Average Rectified (Io)30.9ACurrent - Reverse Leakage @ Vr50 µA @ 1200 VDiode TypeSilicon Carbide Schottky